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1 3 2 lmun5311dw1t1g series sot-363/sc-88 6 4 5 the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital tran- sistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the lmun5311dw1t1g series, two complementary brt devices are housed in the sot?363 package which is ideal for low power surface mount applications where board space is at a premium. simplifies circuit design reduces board space reduces component count dual bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network 1 3 2 6 4 5 q 1 q 2 r 1 r 2 r 1 r 2 xx marking diagram 13 2 6 4 5 device marking information see specific marking information in the device marking table on page 2 of this data sheet. xx = device marking = (see page 2) 256 (note 2.) 1.5 (note 1.) 2.0 (note 2.) maximum ratings (t a = 25c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation p d 187 (note 1.) mw t a = 25c derate above 25c mw/c thermal resistance ? r ja 670 (note 1.) c/w junction-to-ambient 490 (note 2.) characteristic (both junctions heated) symbol max unit total device dissipation t a = 25c derate above 25c p d 250 (note 1.) 385 (note 2.) 2.0 (note 1.) 3.0 (note 2.) mw mw/c thermal resistance ? junction-to-ambient r ja 493 (note 1.) 325 (note 2.) c/w thermal resistance ? junction-to-lead r jl 188 (note 1.) 208 (note 2.) c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad leshan radio company, ltd. 1/29 we declare that the material of product compliance with rohs requirements.
device package marking r1(k) r2(k) shipping lmun5311dw1t1g sot-363 11 10 10 3000/tape&reel lmun5311dw1t3g sot-363 11 10000/tape&reel lmun5312dw1t1g sot-363 12 22 22 3000/tape&reel lmun5312dw1t3g sot-363 12 10000/tape&reel lmun5313dw1t1g sot-363 13 47 47 3000/tape&reel lmun5313dw1t3g sot-363 13 10000/tape&reel lmun5314dw1t1g sot-363 14 10 47 3000/tape&reel lmun5314dw1t3g lmun5315dw1t1g sot-363 15 10 3000/tape&reel lmun5315dw1t3g sot-363 10000/tape&reel lmun5316dw1t1g sot-363 16 4.7 3000/tape&reel lmun5316dw1t3g sot-363 16 4.7 10000/tape&reel lmun5330dw1t1g sot-363 30 1 1 3000/tape&reel lmun5330dw1t3g sot-363 30 1 1 10000/tape&reel lmun5331dw1t1g sot-363 31 2.2 2.2 3000/tape&reel lmun5331dw1t3g sot-363 31 2.2 2.2 10000/tape&reel lmun5332dw1t1g sot-363 32 4.7 4.7 3000/tape&reel lmun5332dw1t3g sot-363 32 4.7 4.7 10000/tape&reel lmun5333dw1t1g sot-363 33 4.7 47 3000/tape&reel lmun5333dw1t3g sot-363 33 4.7 47 10000/tape&reel lmun5334dw1t1g sot-363 34 22 47 3000/tape&reel lmun5334dw1t3g sot-363 34 22 47 10000/tape&reel lmun5335dw1t1g sot-363 35 2.2 47 3000/tape&reel lmun5335dw1t3g sot-363 35 2.2 47 10000/tape&reel lmun5311dw1t1g series ordering, shipping, device marking and resistor values leshan radio company, ltd. 2/29 10 10 22 22 47 47 sot-363 14 10 47 10000/tape&reel 15 10
electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) (continued) characteristic symbol min typ max unit on characteristics (note 4) dc current gain lmun5311dw1t1g (v ce = 10 v, i c = 5.0 ma) lmun5312dw1t1g lmun5313dw1t1g lmun5314dw1t1g lmun5315dw1t1g lmun5316dw1t1g lmun5330dw1t1g lmun5331dw1t1g lmun5332dw1t1g lmun5333dw1t1g lmun5334dw1t1g lmun5335dw1t1g h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 ? ? ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) lmun5330dw1t1g/lmun5331dw1t1g (i c = 10 ma, i b = 1 ma) lmun5315dw1t1g/lmun5316dw1t1g lmun5332dw1t1g/lmun5333dw1t1g/lmun5334dw1t1g v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) lmun5311dw1t1g lmun5312dw1t1g lmun5314dw1t1g lmun5315dw1t1g lmun5316dw1t1g lmun5330dw1t1g lmun5331dw1t1g lmun5332dw1t1g lmun5333dw1t1g lmun5334dw1t1g lmun5335dw1t1g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) lmun5313dw1t1g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) lmun5330dw1t1g (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) lmun5315dw1t1g lmun5316dw1t1g lmun5333dw1t1g v oh 4.9 ? ? vdc input resistor lmun5311dw1t1g lmun5312dw1t1g lmun5313dw1t1g lmun5314dw1t1g lmun5315dw1t1g lmun5316dw1t1g lmun5330dw1t1g lmun5331dw1t1g lmun5332dw1t1g lmun5333dw1t1g lmun5334dw1t1g lmun5335dw1t1g r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k resistor ratiolmun5311dw1t1g/lmun5312dw1t1g/lmun5313dw1t1g lmun5314dw1t1g lmun5315dw1t1g/lmun5316dw1t1g lmun5330dw1t1g/lmun5331dw1t1g/lmun5332dw1t1g lmun5333dw1t1g lmun5334dw1t1g lmun5335dw1t1g r1/r2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.0 0.21 ? 1.0 0.1 0.47 0.047 1.2 0.25 ? 1.2 0.185 0.56 0.056 4. pulse test: pulse width < 300 s, duty cycle < 2.0% lmun5311dw1t1g series leshan radio company, ltd. 3/29
electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current lmun5311dw1t1g (v eb = 6.0 v, i c = 0) lmun5312dw1t1g lmun5313dw1t1g lmun5314dw1t1g lmun5315dw1t1g lmun5316dw1t1g lmun5330dw1t1g lmun5331dw1t1g lmun5332dw1t1g lmun5333dw1t1g lmun5334dw1t1g lmun5335dw1t1g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0% figure 1. derating curve 300 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) r ja = 490 c/w 250 p d , power dissipation (mw) all lmun5311dw1t1g series devices lmun5311dw1t1g series leshan radio company, ltd. 4/29
typical electrical characteristics ? lmun5311dw1t1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =?25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c ?25 c t a =?25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a =?25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 5/29
typical electrical characteristics ? lmun5311dw1t1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =?25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage figure 11. input voltage versus output current 0.01 20 i c , collector current (ma) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c ?25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =?25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =?25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 6/29
typical electrical characteristics ? lmun5312dw1t1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =?25 c 0 i c , collector current (ma) 100 t a =?25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 16. input voltage versus output current 0.001 t a =?25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 7/29
typical electrical characteristics ? lmun5312dw1t1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c figure 18. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 19. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =?25 c 75 c 100 10 1 0.1 40 50 figure 20. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 21. input voltage versus output current 0.01 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =?25 c 50 010 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c ?25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =?25 c v o = 5 v v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 8/29
typical electrical characteristics ? lmun5313dw1t1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 22. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =?25 c 75 c 25 c figure 23. dc current gain figure 24. output capacitance 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 25. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 26. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =?25 c t a =?25 c v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 9/29
typical electrical characteristics ? lmun5313dw1t1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 27. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c figure 28. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) ?25 c figure 29. output capacitance figure 30. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) ?25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 31. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =?25 c 25 c 75 c 50 i c /i b = 10 t a =?25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 10/29
typical electrical characteristics ? lmun5314dw1t1g npn transistor 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 02468101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 32. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 33. dc current gain 1 10 100 i c , collector current (ma) figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 36. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =?25 c t a =75 c 25 c ?25 c v o = 0.2 v t a =?25 c 75 c v o = 5 v 25 c 75 c v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 11/29
typical electrical characteristics ? lmun5314dw1t1g pnp transistor 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 37. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 38. dc current gain 1 10 100 i c , collector current (ma) figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 41. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =?25 c t a =75 c 25 c ?25 c v o = 5 v v o = 0.2 v 25 c t a =?25 c 75 c 75 c v ce(sat) , collector voltage (volts) lmun5311dw1t1g series leshan radio company, ltd. 12/29
typical electrical characteristics ? lmun5315dw1t1g npn transistor 75 c 25 c ?25 c figure 42. v ce(sat) versus i c figure 43. dc current gain figure 44. output capacitance figure 45. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 46. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 13/29
typical electrical characteristics ? lmun5315dw1t1g pnp transistor 75 c 25 c ?25 c figure 47. v ce(sat) versus i c figure 48. dc current gain figure 49. output capacitance figure 50. output current versus input voltage v in , input voltage (volts) figure 51. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 14/29
typical electrical characteristics ? lmun5316dw1t1g npn transistor 75 c 25 c ?25 c figure 52. v ce(sat) versus i c figure 53. dc current gain figure 54. output capacitance figure 55. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 56. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 15/29
typical electrical characteristics ? lmun5316dw1t1g pnp transistor 75 c 25 c ?25 c figure 57. v ce(sat) versus i c figure 58. dc current gain figure 59. output capacitance figure 60. output current versus input voltage v in , input voltage (volts) figure 61. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 16/29
typical electrical characteristics ? lmun5330dw1t1g npn transistor 75 c 25 c ?25 c figure 62. v ce(sat) versus i c figure 63. dc current gain figure 64. output current versus input voltage v in , input voltage (volts) figure 65. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 0.01 0.1 v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 17/29
typical electrical characteristics ? lmun5330dw1t1g pnp transistor 75 c 25 c ?25 c figure 66. v ce(sat) versus i c figure 67. dc current gain figure 68. output capacitance figure 69. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 70. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 18/29
typical electrical characteristics ? lmun5331dw1t1g npn transistor 75 c 25 c ?25 c figure 71. v ce(sat) versus i c figure 72. dc current gain figure 73. output capacitance figure 74. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 75. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 12 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 10 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v lmun5311dw1t1g series leshan radio company, ltd. 19/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5331dw1t1g pnp transistor 75 c 25 c ?25 c figure 76. v ce(sat) versus i c figure 77. dc current gain figure 78. output capacitance figure 79. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 80. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 20/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5332dw1t1g npn transistor 75 c 25 c ?25 c figure 81. v ce(sat) versus i c figure 82. dc current gain figure 83. output capacitance figure 84. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 85. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 21/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5332dw1t1g pnp transistor 75 c 25 c ?25 c figure 86. v ce(sat) versus i c figure 87. dc current gain figure 88. output capacitance figure 89. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 90. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3 100 5 6 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 22/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5333dw1t1g npn transistor 75 c 25 c ?25 c figure 91. v ce(sat) versus i c figure 92. dc current gain figure 93. output capacitance figure 94. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 95. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 5 1 3 7 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 23/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5333dw1t1g pnp transistor 75 c 25 c ?25 c figure 96. v ce(sat) versus i c figure 97. dc current gain figure 98. output capacitance figure 99. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 100. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 20 3.5 3 2.5 100 5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 24/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5334dw1t1g npn transistor 75 c 25 c ?25 c figure 101. v ce(sat) versus i c figure 102. dc current gain figure 103. output capacitance figure 104. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 105. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 3 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 2.5 0.5 1.5 3.5 10 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 25/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5334dw1t1g pnp transistor 75 c 25 c ?25 c figure 106. v ce ( sat ) versus i c figure 107. dc current gain i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 75 c 25 c t a = ?25 c 0.01 20 100 5 i c /i b = 10 v ce = 10 v leshan radio company, ltd. 26/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5335dw1t1g npn transistor 75 c 25 c ?25 c figure 108. v ce(sat) versus i c figure 109. dc current gain figure 110. output capacitance figure 111. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 112. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 27/29
lmun5311dw1t1g series typical electrical characteristics ? lmun5335dw1t1g pnp transistor 75 c 25 c ?25 c figure 113. v ce(sat) versus i c figure 114. dc current gain figure 115. output capacitance figure 116. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 117. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v leshan radio company, ltd. 28/29
notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.031 0.043 0.80 1.10 d 0.004 0.012 0.10 0.30 g 0.026 bsc 0.65 bsc h --- 0.004 --- 0.10 j 0.004 0.010 0.10 0.25 k 0.004 0.012 0.10 0.30 n 0.008 ref 0.20 ref s 0.079 0.087 2.00 2.20 pin 1. emitter 2 2. base 2 3. collector 1 4.emitter 1 5. base 1 6.collector 2 b 0.2 (0.008) a g s h c n j k d 6pl 6 5 4 1 2 3 - b - m m 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sc - 88/sot - 363 lmun5311dw1t1g series leshan radio company, ltd. 29/29

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